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SOT-223 Z0103MN Standard 1A triac

$0.03

3000-29999
Piece/Pieces
$0.02

≥30000
Piece/Pieces

option:

I²t:0.35A² s
IGM:1A
PG(AV):1W
dI/dt:20A/µs
IT(RMS)：1A
Tstg:- 40 to + 150℃

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-Z0103MN

Brand: YZPST

Place Of Origin: China

IT(RMS): 1A

I²t: 0.35A² s

DI/dt: 20A/µs

IGM: 1A

PG(AV): 1W

Tstg: - 40 to + 150℃

Tj: - 40 to + 125℃

Supply Ability & Additional Information

Productivity: 10000000000

Transportation: Ocean,Land,Air,Others

Place of Origin: CHINA

Supply Ability: 10000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Picture Example:

Standard 1A Triacs P/N:YZPST-Z0103MN0

Features

On-state rms current, IT(RMS) 1 A

Repetitive peak off-state voltage, V DRM/VRRM 800 V

Triggering gate current, IGT (Q1) 3 to 25 mA

Description

The Z01 series is suitable for general purpose AC switching applications. These devices are

typically used in applications such as home

appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,...

Different gate current sensitivities are available, allowing optimized performance when driven

directly through microcontrollers.

Table 1. Absolute maximum ratings

Symbol	Parameter			Value	Unit
IT(RMS)	On-state rms current (full sine wave)	SOT-223	T tab = 90 °C	1	A
		TO-92	TL = 50 °C
		SMBflat-3L	T tab = 107 °C
ITSM	Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C)	F = 50 Hz	t = 20 ms	8	A
ITSM		F = 60 Hz	t = 16.7 ms	8.5	A
I²t	I²t Value for fusing	tp = 10 ms		0.35	² A s
dI/dt	Critical rate of rise of on-state current IG = 2 x I GT , tr ≤ 100 ns	F = 120 Hz	Tj = 125 °C	20	A/µs
IGM	Peak gate current	tp = 20 µs	Tj = 125 °C	1	A
PG(AV)	Average gate power dissipation		Tj = 125 °C	1	W
Tstg Tj	Storage junction temperature range Operating junction temperature range			- 40 to + 150 - 40 to + 125	°C

Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol	Test conditions	Quadrant		Z01				Unit
Symbol	Test conditions	Quadrant		03	07	09	10	Unit
I GT (1)	VD = 12 V, RL = 30 Ω	I - II - III	MAX.	3	5	10	25	mA
I GT (1)		IV	MAX.	5	7	10	25	mA
VGT		ALL	MAX.	1.3				V
VGD	VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C	ALL	MIN.	0.2				V
IH (2)	IT = 50 mA		MAX.	7	10	10	25	mA
IL	IG = 1.2 I GT	I - III - IV	MAX.	7	10	15	25	mA
IL	IG = 1.2 I GT	II	MAX.	15	20	25	50	mA
dV/dt (2)	VD = 67% V DRM gate open Tj = 110 °C		MIN.	10	20	50	100	V/µs
(dV/dt)c (2)	(dI/dt)c = 0.44 A/ms, Tj = 110 °C		MIN.	0.5	1	2	5	V/µs

1. Minimum I GT is guaranteed at 5% of IGT max.

2. For both polarities of A2 referenced to A1.

Table 3. Static characteristics

Symbol	Test conditions			Value	Unit
VTM(1)	ITM = 1.4 A, tp = 380 µs	Tj = 25 °C	MAX.	1.6	V
V to (1)	Threshold voltage	Tj = 125 °C	MAX.	0.95	V
Rd (1)	Dynamic resistance	Tj = 125 °C	MAX.	400	mΩ
I DRM	V DRM = VRRM	Tj = 25 °C	MAX.	5	µA
IRRM	V DRM = VRRM	Tj = 125 °C	MAX.	0.5	mA

1. For both polarities of A2 referenced to A1.

Table 4. Thermal resistances

Symbol	Parameter				Value	Unit
Rth(j-t)	Junction to tab (AC)		SOT-223		25
Rth(j-t)	Junction to tab (AC)		SMBflat-3L		14
Rth(j-I)	Junction to lead (AC)		TO-92		60
		S(1) = 5 cm²	SOT-223	MAX.	60	°C/W
Rth(j-a)	Junction to ambient	S(1) = 5 cm²	SMBflat-3L		75
			TO-92		150