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Home > Products > Semiconductor Stud Devices > Fast Recovery Stud Diode > High Power Fast Recovery Diode
Mr. John chang
Model No.: YZPST-SD233N/R
Brand: YZPST
Productivity: 100
Transportation: Ocean,Air
Place of Origin: CHINA
Supply Ability: 1000
Certificate: ISO9001-2008,ROHS
HS Code: 85411000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
High Power Fast Recovery Diode
FAST RECOVERY DIODES, Stud Version
Features: High power FAST Recovery Diode series, 1.0 to 2.0 μs recovery time, High voltage ratings up to 5000V, High current capability, Optimized turn on and turn off characteristics, Low forward recovery, Fast and soft reverse recover, Compression bonded encapsulation, Stud version B-8, Maximum junction temperature 125°C
Typical Applications: Snubber diode for GTO, Fast recovery, rectifier applications
Forward Conduction
Parameters
PSTSD233N/R
Units
Conditions
IF(AV Max. average forward current
@ Case temperature
250
A
180° conduction, half sine wave
60
°C
IF(RMX) Max. RMS forward current
390
IFSM Max. peak, one-cycle forward
non-repetitive surge current
5500
t = 10ms
No voltage
reapplied
Initial TJ =TJmax.
5760
t = 8.3ms
I2t Maximum I2t for fusing
150000
A2s
140000
I2√t Maximum I2√t for fusing
1500000
KA2√s
I2t for time tx = I2√t x √tx ;
0.1 ≤ tx ≤ 10ms, VRRM = 0V
VFM Maximum forward voltage drop
3.0
V
TJ = 25 oC, IFM = 1200 (arm)
IRRM Max. DC reverse current
10.0
μA
TJ = 25 oC, per diode at VRRM
Trr
5
μs
Outlines Table
Product Categories : Semiconductor Stud Devices > Fast Recovery Stud Diode
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