YANGZHOU POSITIONING TECH CO., LTD.
All Products
Semiconductor Disc Devices(Capsule Type)
Capacitor for Electric Furnace
Semiconductor Plastic Package
Capacitor For Power Transmission And Transformation
Semiconductor Module Devices
DC Capacitor For Electric Furnace
Semiconductor Stud Devices
Damping and Absorption Capacitors
Semiconductor Parts
Solid-state capacitors / Motor starting capacitors
Capacitor For Electric Furnace
Other Capacitors
Aluminum Electrolytic Capacitors/ Ceramic Capacitors
Semiconductor Fuse And Ferrite
Electronic Components Resistor
Thermistor
Semiconductor Fuse and Ferrite
Solid-state Capacitors / Motor Starting Capacitors
Litz Wire
Electronic Components Transformer
Surge Protector and Arrester
Smart Drone Power Supply
Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > High ability 16A BTB16-600BW Triac TO-220
Mr. John chang
Model No.: YZPST-BTB16-600BW
Brand: YZPST
Place Of Origin: China
IT(RMS): 16A
VDRM: 600V
VRRM: 600V
VTM: ≤ 1.5v
Tstg: -40~150℃
Tj: -40~125℃
ITSM: 160A
I2t: 128A2s
DI/dt: 50A/μs
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 1000000000
Transportation: Ocean,Land,Others
Place of Origin: CHINA
Supply Ability: 1000000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
YZPST-BTB16-600BW
BTA16/BTB16 (BT139) Series 16A Triacs
With high ability to withstand the shock loading of Large current, BTA16/BTB16 series triacs provide high dv/dt rate with strong resistance to electromagnetic interface.
With high commutation performances, 3 quadrantsproducts especially recommended for use on inductive load. From all three terminals to external heatsink, BTA16 provides a rated insulation voltage of 2500 VRMS complying with UL standards
MAIN FEATURES:
symbol
value
unit
IT(RMS)
16
A
VDRM/VRRM
600/800/ 1200
V
VTM
≤ 1.5
ABSOLUTE MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
Storage junction temperature range
Tstg
-40~150
℃
Operating junction temperature range
Tj
-40~125
Repetitive peak off-state voltage (Tj=25C)
VDRM
Repetitive peak reverse voltage (Tj=25C)
VRRM
RMS on-state current
Non repetitive surge peak on-state current (full cycle, F=50Hz)
ITSM
160
I2t value for fusing (tp=10ms)
I2t
128
A2s
Critical rate of rise of on-state current(IG=2× IGT)
dI/dt
50
A/μs
Peak gate current
IGM
4
Average gate power dissipation
PG(AV)
1
W
Peak gate power
PGM
5
ELECTRICAL CHARACTERISTICS (Tj=25C unless otherwise specified)
3 Quadrants:
4 Quadrants:
STATIC CHARACTERISTICS
THERMAL RESISTANCES
Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)
Related Products List
Home
Product
Whatsapp
About Us
Inquiry
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
(Max 5 files. Support jpg, jpeg, png, gif, txt, doc, pdf, xls, docx, xlsx , less than 5MB)