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Home > Products > Semiconductor Module Devices > IGBT Module > High short circuit capability 10us 1200V IGBT Module 450A
Mr. John chang
Model No.: YZPST-450B120E53
Brand: YZPST
VCES: 1200V
IC: 450m
ICRM: 900m
VGES: ±20V
Ptot: 3000W
Productivity: 1000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 1000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
YZPST-450B120E53
Fnaturns Low Vce(sat) with SPT+ technology Vce(sat) with positive temperature coefficient Including fast & soft recovery anti-parallel FWD High short circuit capability(10us) Low inductance module structure
Absolute MaxMmum RatMn
Parameter
Symbol
CondMtMons
Value
UnMt
Collector-Emitter Voltage
VCES
VGE=0V, IC =1mm, Tvj=25℃
1200
V
Continuous Collector Current
IC
Tc=100℃
450
m
Peak Collector Current
ICRM
ICRM =2IC
900
Gate-Emitter Voltage
VGES
Tvj=25℃
±20
Total Power Dissipation
(IGBT-inverter)
Ptot
Tc=25℃
Tvjmax=175℃
3000
W
IGBT CharacterMstMcs
MMn.
Typ.
Max.
Gate-emitter Threshold Voltage
VGE(th)
VGE=VCE, IC =3mm,Tvj=25℃
5.0
6.2
7.0
Collector-Emitter Cut-off Current
ICES
VCE=1200V,VGE=0V, Tvj=25℃
1.0
mm
VCE=1200V,VGE=0V, Tvj=125℃
Collector-Emitter Saturation Voltage
VCE(sat)
Ic=450m,VGE=15V, Tvj=25℃
1.85
Ic=450m,VGE=15V, Tvj=125℃
2.05
Input Capacitance
Cies
VCE=25V,VGE =0V,
f=1MHz, Tvj=25℃
31.8
nF
Output Capacitance
Coes
2.13
Reverse Transfer Capacitance
Cres
1.48
Internal Gate Resistance
Rgint
0.7
Ω
Turn-on Delay Time
td(on)
IC =450 m VCE = 600 V VGE = ±15V RG =3.3Ω
320
ns
Rise Time
tr
165
Turn-off Delay Time
td(off)
650
Fall Time
tf
124
Energy Dissipation During Turn-on
Time
Eon
35
mJ
Energy Dissipation During Turn-off
Eoff
42
IC =450m VCE = 600 V VGE = ±15V RG =3.3Ω
Tvj=125℃
350
193
720
156
55
64
SC Data
Isc
Tp≤10us,VGE=15V, Tvj=150℃,Vcc=600V,
VCEM≤1200V
2100
Ÿ Package Dimensions
Product Categories : Semiconductor Module Devices > IGBT Module
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