HIGH Power Thyristor For Inverter AND CHOPPER APPLICATIONS
YZPST-C712L
Features:
. All Diffused Structure
. Center Amplifying Gate Configuration
. Blocking capabilty up to 2100 volts
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
Blocking - Off State
VRRM (1) | VDRM (1) | VRSM (1) |
2000 | 2000 | 2100 |
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse leakage and off state leakage | IRRM / IDRM | 20 mA 90 mA (3) |
Critical rate of voltage rise | dV/dt (4) | 800 V/msec |
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance
with EIA/NIMA Standard RS-397, Section
5-2-2-6. The value defined would be in addi-
tion to that obtained from a snubber circuit,
comprising a 0.2 mF capacitor and 20 ohms
resistance in parallel with the thristor under
test.
Conducting - on state
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Average value of on-state current | IT(AV) | | 1185 | | A | Sinewave,180o conduction,Tc=80oC |
RMS value of on-state current | ITRMS | | 1700 | | A | Nominal value |
Peak one cPSTCle surge (non repetitive) current | ITSM | | - 18500 | | A A | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t | I2t | | 1.66x106 | | A2s | 8.3 msec and 10.0 msec |
Latching current | IL | | - | | mA | VD = 24 V; RL= 12 ohms |
Holding current | IH | | - | | mA | VD = 24 V; I = 2.5 A |
Peak on-state voltage | VTM | | 1.45 | | V | ITM = 1000 A; Duty Cycle £ 0.01%; Tj =1 25 oC |
Critical rate of rise of on-state current (5, 6) | di/dt | | 800 | | A/ms | Switching from VDRM £ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) | di/dt | | 200 | | A/ms | Switching from VDRM £ 1000 V |
Gating
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Peak gate power dissipation | PGM | | 100 | | W | tp = 40 us |
Average gate power dissipation | PG(AV) | | 5 | | W | |
Peak gate current | IGM | | - | | A | |
Gate current required to trigger all units | IGT | | - 120 - | | mA mA mA | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
Gate voltage required to trigger all units | VGT | | - 3.0 - | | V V V | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
Peak negative voltage | VGRM | | 20 | | V | |
Dynamic
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Delay time | td | | - | 0.7 | ms | ITM = 50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms |
Turn-off time (with VR = -50 V) | tq | | 40 | - | ms | ITM = 1000 A; di/dt = 25 A/ms; VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cPSTCle ³ 0.01% |
Reverse recovery charge | Qrr | | * | | mC | ITM = 1000 A; di/dt = 25 A/ms; VR ³ -50 V |
HERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Operating temperature | Tj | -40 | +125 | | oC | |
Storage temperature | Tstg | -40 | +125 | | oC | |
Thermal resistance - junction to case | RQ (j-c) | | 0.023 - | | oC/W | Double sided cooled Single sided cooled |
Thermal resistamce - case to sink | RQ (c-s) | | 0.0075 - | | oC/W | Double sided cooled * Single sided cooled * |
Mounting force | P | 22.2 | 26.6 | | kN | |
Weight | W | | | - | g | About |