Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > BT134 Triac TO-126 application of IC drive directly

Contact Supplier

Mr. John chang

Leave a message

Contact Now

BT134 Triac TO-126 application of IC drive directly

$41

10-99
Others
$36

≥100
Others

option:

VDRM:600V
VTM:1.5V
VRRM:600V
IDRM Tj=125℃:0.2mA
IT (RMS):2A
IDRM Tj=25℃:10μA

Contact Now

 Chat Now

Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

< >

Overview

Product Attributes

Model No.: YZPST-BT134

Brand: YZPST

Place Of Origin: China

IT (RMS): 2A

VDRM: 600V

VRRM: 600V

VTM: 1.5V

IDRM Tj=25℃: 10μA

IDRM Tj=125℃: 0.2mA

VGT: 1.5V

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000000

Transportation: Ocean,Land,Express,Others

Place of Origin: CHINA

Supply Ability: 1000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: 1000 pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Picture Example:

BT134 Triac TO-126 package

Product features

P+ on the through diffusion isolation,

Single mesa structure (Single Mesa),

Table glass passivation process,

Gate logic level trigger

Application of IC drive directly

YZPST-BT134

Main Feature (Tj=25℃)

Symbol	Value	Unit
IT (RMS)	2	A
VDRM / VRRM	600	V
VTM	1.5	V

Electrical characteristics (Tj=25℃ unless otherwise stated)

Symbol	Test Conditions		Value			Unit
Symbol	Test Conditions		Min	Type	Max	Unit
IGT	VD=12V,IGT=0.1A	ⅠⅡⅢ	-----	-----	3	mA
IGT	VD=12V,IGT=0.1A	Ⅳ	-----	-----	5	mA
IDRM	VD=VDRM	Tj=25℃	-----	-----	10	μA
IDRM	VD=VDRM	Tj=125℃	-----	-----	0.2	mA
IRRM	VD=VRRM	Tj=25℃	-----	-----	10	μA
IRRM	VD=VRRM	Tj=125℃	-----	-----	0.2	mA
IL	VD=12V,IGT=0.1A	ⅠⅡⅢ	-----	-----	7	mA
IL	VD=12V,IGT=0.1A	Ⅳ	-----	-----	15	mA
VGT	VD=12V		-----	-----	1.5	V
VGD	VD=VDRM, Tj=125℃		0.2	-----	-----	V
IH	VD=12V ，IT=100mA		-----	-----	15	mA
VTM	ITM=5A,tp=380 μs		-----	-----	1.6	V
dV/dt	VD=67%VDRM,		30			v/ μs
dV/dt	GateOpen, Tj=125℃		30	-----	-----	v/ μs