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Home > Products > Semiconductor Disc Devices(Capsule Type) > Inverter Thyristor > Frequency power inverter thyristor r1275
Mr. John chang
Model No.: YZPST-R1275NS21L
Brand: YZPST
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 1000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
High Power Thyristor Inverter
YZPST-R1275NS21L
Parameter
Symbol
Min.
Max.
Typ.
Units
Conditions
Average value of on-state current
IT(AV)
1275
A
Tc=55oC
RMS value of on-state current
ITRMS
1870
Nominal value
Peak one cPSTCle surge
(non repetitive) current
ITSM
21400
18900
8.3 msec (60Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
10.0 msec (50Hz), sinusoidal wave-
I square t
I2t
2.66x106
A2s
8.3 msec and 10.0 msec
Latching current
IL
1000
mA
VD = 24 V; RL= 12 ohms
Holding current
IH
500
VD = 24 V; I = 2.5 A
Peak on-state voltage
VTM
1.90
V
ITM = 2000 A; Duty cPSTCle £ 0.01%
Critical rate of rise of on-state
current (5, 6)
di/dt
A/ms
Switching from VDRM£ 1000 V,
non-repetitive
Gating
Peak gate power dissipation
PGM
200
W
tp = 40 us
Average gate power dissipation
PG(AV)
5
Peak gate current
IGM
10
Gate current required to trigger all units
IGT
300
150
125
VD = 6 V;RL = 3 ohms;Tj = -40 oC
VD = 6 V;RL = 3 ohms;Tj = +25 oC
VD = 6 V;RL = 3 ohms;Tj = +125oC
Gate voltage required to trigger all units
VGT
0.30
3
VD = 6 V;RL = 3 ohms;Tj = 0-125oC
VD = Rated VDRM; RL = 1000 ohms;
Tj = + 125 oC
Peak negative voltage
VGRM
Dynamic
Delay time
td
1.5
0.7
ms
ITM = 500 A; VD = Rated VDRM
Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms
Turn-off time (with VR = -50 V)
tq
40
ITM = 1000 A; di/dt = 25 A/ms;VR³ -50 V; Re-applied dV/dt = 200 V/ms linear to 80% VDRM; VG = 0;
Tj = 125 oC; Duty cPSTCle ³ 0.01%
Reverse recovery charge
Qrr
*
2000
mC
ITM = 1000 A; di/dt = 25 A/ms;VR³ -50 V
* For guaranteed max. value, contact factory.
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Operating temperature
Tj
-40
+125
oC
Storage temperature
Tstg
+150
Thermal resistance - junction to case
RQ (j-c)
0.023
0.046
oC/W
Double sided cooled
Single sided cooled
Thermal resistamce - case to sink
0.010
0.020
Double sided cooled *
Single sided cooled *
Mounting force
P
19.5
21
kN
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data
Outline Drawing
Product Categories : Semiconductor Disc Devices(Capsule Type) > Inverter Thyristor
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