High Power Thyristor FOR PHASE CONTROL
YPPST-N195CH16
Best thyristor 1600V, Features:. Interdigitated Amplifying Gate Configuration
. Guaranteed Maximum Turn-Off Time . High dV/dt Capability . All Diffused Structure Pressure Assembled Device.
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
VRRM (1) | VDRM (1) | VRSM (1) |
1600 | 1600 | 1700 |
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse leakage and off state leakage | IRRM / IDRM | 5 mA 50 mA (3) |
Critical rate of voltage rise | dV/dt (4) | 1000 V/msec |
Notes:
All ratings are specified for Tj=25 oC unless otherwise stated.
(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 F capacitor and 20 ohmsresistance in parallel with the thristor under test.
Conducting - on state
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Max. average value of on-state current | IT(AV)M | | 400 | | A | Sinewave,180o conduction,Tc=55oC |
RMS value of on-state current | ITRMS | | 900 | | A | Nominal value |
Peak one cPSTCle surge (non repetitive) current | ITSM | | - 4.3 | | kA kA | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t | I2t | | 96x103 | | A2s | 8.3 msec |
Latching current | IL | | - | | mA | VD = 24 V; RL= 12 ohms |
Holding current | IH | | 250 | | mA | VD = 24 V; I = 2.5 A |
Peak on-state voltage | VTM | | 2.09 | | V | ITM = 1400 A |
Critical rate of rise of on-state current (5, 6) | di/dt | | 250 | | A/ms | Switching from VDRM £ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) | di/dt | | 125 | | A/ms | Switching from VDRM £ 1000 V |
Gating
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Peak gate power dissipation | PGM | | 30 | | W | |
Average gate power dissipation | PG(AV) | | 3 | | W | |
Peak gate current | IGM | | - | | A | |
Gate current required to trigger all units | IGT | | 250 | | mA | VD = 10 V;IT=3A;Tj = +25 oC |
Gate voltage required to trigger all units | VGT | | 2.5 | | V | VD = 10 V;IT=3A;Tj = +25 oC |
Peak negative voltage | VRGM | | 5 | | V | |
Dynamic
Parameter | Symbol | Min. | Max. | Typ. | Units | |
Delay time | tgd | | 2.0 | - | ms | VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C |
Turn-on time | tgt | | - | - | |
Turn-off time (with VR = -5 V) | tq | - | - | 150 | ms | ITM=300A, tp=500us, di/dt=10A/us, Vr=100V, Vdr=67%VDRM, dVdr/dt=20V/us |
Reverse recovery current | Irm | | - | | A | ITM=4000A, tp=2000us, di/dt=60A/us |
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Operating temperature | Tj | -60 | +125 | | oC | |
Storage temperature | Tstg | -60 | +125 | | oC | |
Thermal resistance - junction to case | RQ (j-c) | | - - | | K/kW | Double sided cooled Single sided cooled |
Thermal resistamce - case to sink | RQ (c-s) | | - - | | K/kW | Double sided cooled * Single sided cooled * |
Thermal resistance - junction to case | RQ (j-s) | | 80 174 | | K/kW | Double sided cooled Single sided cooled |
Mounting force | F | 5 | 7 | - | kN | |
Weight | W | | | - | Kg | about |
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data