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Home > Products > Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor > High dV/dt Disc Type thyristor Pressure Assembled Device
Mr. John chang
Model No.: YZPST-KK2500A2500V
Brand: YZPST
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 500
Certificate: ISO9001-2008
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
High Power Thyristor
YZPST-KK2500A2500V
HIGH Power Thyristor FOR PHASE CONTROL APPLICATIONS
Features: . All Diffused Structure . Interdigitated Amplifying Gate Configuration . Guaranteed Maximum Turn-Off Time
. High dV/dt Capability . Pressure Assembled Device
Parameter
Symbol
Min.
Max.
Typ.
Units
Conditions
Average value of on-state current
IT(AV)
2500
A
Sinewave,180o conduction,Tc=70oC
RMS value of on-state current
ITRMS
3900
Nominal value
Peak one cPSTCle surge
(non repetitive) current
ITSM
45000
42000
8.3 msec (60Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
10.0 msec (50Hz), sinusoidal wave-
I square t
I2t
5.5x106
A2s
8.3 msec
Latching current
IL
1000
mA
VD = 24 V; RL= 12 ohms
Holding current
IH
500
VD = 24 V; I = 2.5 A
Peak on-state voltage
VTM
2.00
V
ITM = 3000 A; Tj = 125 oC
Critical rate of rise of on-state
current (5, 6)
di/dt
800
A/ms
Switching from VDRM£ 1000 V,
non-repetitive
current (6)
300
Switching from VDRM£ 1000 V
Gating
Peak gate power dissipation
PGM
200
W
tp = 40 us
Average gate power dissipation
PG(AV)
5
Peak gate current
IGM
20
Gate current required to trigger all units
IGT
125
VD = 6 V;RL = 3 ohms;Tj = -40 oC
VD = 6 V;RL = 3 ohms;Tj = +25 oC
VD = 6 V;RL = 3 ohms;Tj = +125oC
Gate voltage required to trigger all units
VGT
0.30
4
VD = 6 V;RL = 3 ohms;Tj = 0-125oC
VD = Rated VDRM; RL = 1000 ohms;
Tj = + 125 oC
Peak negative voltage
VGRM
Dynamic
Delay time
td
2.0
ms
ITM = 50 A; VD = 67% VDRM
Gate pulse: VG = 30 V; RG = 10 ohms; tr = 0.1 ms; tp = 20 ms
Turn-off time (with VR = -5 V)
tq
80
ITM > 2000 A; di/dt = 25 A/ms;
VR³ -5 V; Re-applied dV/dt = 400 V/ms linear to 67% VDRM ;
Tj = 125 oC; Duty cPSTCle ³ 0.01%
Reverse recovery current
Irr
VR³ -50 V; Tj = 125 oC
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Operating temperature
Tj
-40
+125
oC
Storage temperature
Tstg
+150
Thermal resistance - junction to case
RQ (j-c)
0.012
oC/W
Double sided cooled
Single sided cooled
Thermal resistamce - case to sink
RQ (c-s)
0.002
Double sided cooled *
Single sided cooled *
Mounting force
P
8000
35.5
10000
44.4
lb.
kN
Weight
3.5
1.60
Lb.
Kg.
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data
A: 73 mm
B: 109 mm
C: 98 mm
E: 36 mm
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor
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