High dv/dt rate X0605 6A SCR

symbol

value

unit

IT(RMS)

6

A

IGT

≤10

mA

VDRM/VRRM

600/800

V

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40~150

℃

Operating junction temperature range

Tj

-40~110

℃

Repetitive peak off-state voltage (Tj=25℃)

VDRM

600/800

V

Repetitive peak reverse voltage (Tj=25℃)

VRRM

600/800

V

RMS on-state current

IT(RMS)

6

A

Non repetitive surge peak on-state current

(full cycle, F=50Hz)

ITSM

45

A

I2t value for fusing (tp=10ms)

I2t

6.75

A2s

Critical rate of rise of on-state current (IG=2 × IGT)

dI/dt

50

A/ μs

Peak gate current

IGM

1.8

A

Average gate power dissipation

PG(AV)

0.3

W

Peak gate power

PGM

3

W