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YANGZHOU POSITIONING TECH CO., LTD. [Jiangsu,China] Business Type:Trade Company , Distributor/Wholesaler , Manufacturer , Service Main Markets: Africa , Americas , Asia , Europe , Worldwide Exporter:91% - 100% Certs:ISO9001, REACH, RoHS, Test Report, UL Description:500V N-Channel Power MOSFET,Fast Switching Power MOSFET,N-Channel Power MOSFET 500V

YANGZHOU POSITIONING TECH CO., LTD.

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Home > Products > Semiconductor Plastic Package > Silicon Transistor > Fast switching 500V N-Channel Power MOSFET

Fast switching 500V N-Channel Power MOSFET
  • Fast switching 500V N-Channel Power MOSFET
  • Fast switching 500V N-Channel Power MOSFET
  • Fast switching 500V N-Channel Power MOSFET
  • Fast switching 500V N-Channel Power MOSFET

Fast switching 500V N-Channel Power MOSFET

  • $0.25
    5000-19999
    Piece/Pieces
  • $0.19
    ≥20000
    Piece/Pieces
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Overview
Product Attributes

Model No.: YZPST-SP13N50K

Brand: YZPST

Place Of Origin: China

Package: TO-220

VDSS: 500V

ID: 13A

IDM: 52A

VGSS: ±30V

EAS: 550mJ

EAR: 65mJ

PD: 60W

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000000

Transportation: Ocean,Land,Express,Others

Place of Origin: CHINA

Supply Ability: 1000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
Picture Example:
P/N: YZPST-SP13N50KF
500V N-Channel Power MOSFET
FEATURES
Fast switching
100% avalanche tested
Improved dv/dt capability
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)

Power Factor Correction (PFC)

Yzpst Sp13n50k To 220 Jpg

Device Ordering Marking Packing Information

 

Ordering Number

 

Package

 

Marking

 

Packing

 

SP13N50KF

 

TO-220

 

SP13N50KF

Tube


Absolute Maximum Ratings  TC  = 25ºC, unless otherwise noted
Value
Parameter Symbol TO-220 Unit
Drain-Source Voltage (VGS  = 0V) VDSS 500 V
Continuous Drain Current ID 13 A
Pulsed Drain Current                                           (note1) IDM 52 A
Gate-Source Voltage VGSS ±30 V
Single Pulse Avalanche Energy                         (note2) EAS 550 mJ
Repetitive Avalanche Energy                             (note1) EAR 65 mJ
Power Dissipation (TC  = 25ºC) PD 60 W
Operating Junction and Storage Temperature Range TJ, Tstg -55~+150 ºC
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Resistance
Value
Parameter Symbol TO-220 Unit
Thermal Resistance, Junction-to-Case RthJC 2.1 ºC/W
Thermal Resistance, Junction-to-Ambient RthJA 100

Product Categories : Semiconductor Plastic Package > Silicon Transistor

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