YZPST-IXFN62N80Q3 Power MOSFET module factory and manufacturer

Power MOSFET

 : YZPST-IXFN62N80Q3

N-Channel Enhancement Mode

Fast Intrinsic Rectifier

Avalanche Rated

Product parameters

Symbol	Test Conditions	Maximum Ratings
FET Type		N-Channel
Technology		MOSFET (Metal Oxide)
VDSS	TJ = 25°C to 150°C	800V
VGS	Continuous	±30V
ID25	TC = 25°C	49A
PD	TC = 25°C	960W
VGS(th)	VDS = VGS, ID = 8mA	6.5V(max.)
IDSS	TJ= 125°C	4mA
Ciss	VGS = 0 V, VDS = 25 V, f = 1 MHz	13.6pF
Qg(on)	VGS = 10V, VDS = 0.5 • VDSS, ID = 31A	270nC
TJ		﹣55℃~150℃
Mounting Type		Chassis Mount
Supplier Device Package		SOT-227B
Package / Case		SOT-227-4, miniBLOC

Features

International Standard Package

Low Intrinsic Gate Resistance 

miniBLOC with Aluminum Nitride

Isolation 

Avalanche Rated 

Low Package Inductance 

Fast Intrinsic Rectifier 

Low RDS(on) and QG

Applications

DC-DC Converters 

Battery Chargers 

Switch-Mode and Resonant-Mode

Power Supplies 

DC Choppers 

Temperature and Lighting Controls

Advantages

High Power Density 

Easy to Mount 

Space Savings