YANGZHOU POSITIONING TECH CO., LTD.

162A Dual Thyristor Modules

  • $26
    1-19
    Piece/Pieces
  • $19
    ≥20
    Piece/Pieces
Payment Type:
L/C,T/T,Paypal
Incoterm:
FOB,CFR,CIF
Min. Order:
1 Piece/Pieces
Transportation:
Ocean,Air
Port:
SHANGHAI
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  • Product Description
Overview
Product Attributes

Model No.YZPST-SKKT162-08E

BrandYZPST

ApplicationHigh Frequency, Current Mirror

Supply TypeOriginal Manufacturer, Odm, Agency, Other

Reference MaterialsDatasheet, Photo, Other

Package TypeSurface Mount, Throught Hole

Installation MethodThrough Hole, Surface Mount

FET FunctionSilicon Carbide (Sic), Standard, Super Junction, Ganfet (Gallium Nitride), Not Applicable

ConfigurationSingle, T-Type, Single Switch, Not Applicable

IT(AV)162A

ITRMS250A

ITSM4800A

I2t115kA2S

VDRM/VRRM800/800V

Di/dt200A/us

Viso4000/4500V

Tj-40 ~ + 125℃

Tstg-40 ~ + 125℃

Supply Ability & Additional Information

Productivity1000

TransportationOcean,Air

Place of OriginChina

Supply Ability10000

CertificateISO9001-2008,ROHS

HS Code85413000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces



Dual Thyristor Modules

TYPE:YZPST-SKKT162/08E


Features

Heat transfer through aluminium nitride ceramic isolated metal baseplate
Precious metal pressure contacts for high reliability
Thyristor with amplifying gate


Typical Applications

· DC motor control

· AC motor soft starters

· Temperature control

· Professional light dimming

Maximum Ratings

Symbol

Condition

Ratings

Unit

IT(AV)

Single phase,half wave,85° conduction TC=77

162

A

ITRMS

Single phase,half wave,85° conduction

250

A

ITSM

TC=125

4800

A

I2t

TC=125

115

kA2S

VDRM/VRRM

TC=125

800/800

V

di/dt

non-repetitive

200

A/us

Viso

A.C.1m/1S

4000/4500

V

Tj

 

-40  ~  + 125

Tstg

 

-40  ~  + 125

W

 

-

g

Electrical Characteristics

Symbol

Condition

Ratings

Unit

IDRM /IRRM

AtVDRMSingle phase,half wave,TC=125

60

mA

VTM

On-State Current 500A,Tj=25

1.85

V

VT(TO)

Tj=125

1.35

V

tgd

Tj=25

1

us

tq

Tj=125

 

us

IGT/VGT

Tj=25

150 / 2

mA/V

VGD

VD=67%VDRM , Tj=125

0.25

V

DV/DT

VD=67%VDRM

1000

V/us

IH

Tj=25

400

mA

IL

Tj=25

1000

mA

Rth(j-c)

Per Module

0.08

K/W

Outline Drawing

162A Dual Thyristor Modules









Product Categories : Semiconductor Module Devices > Thyristor Module

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