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60mA Asymmetric Thyristor VRRM 30V

$60

1-99
Piece/Pieces
$48

≥100
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

1 Piece/Pieces

Transportation:

Ocean,Air

Port:

SHANGHAI

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Product Description

Product Attributes
Supply Ability & Additional Information

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Overview

Product Attributes

Model No.: YZPST-A1237NC280

Brand: YZPST

IDRM: 60mA

IRRM: 10mA

Tjm: -40~125℃

Supply Ability & Additional Information

Productivity: 1000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 1000

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Asymmetric Thyristor

YZPST-A1237NC280

Asymmetric Thyristor 25V company has passed ISO9001 quality system certification and the quality is guaranteed.Suitable for your needs of SCR.

Blocking - Off State

VDRM (1)	VDSM (1)	VRRM (1)	VRSM(1)
2800	2800	30	30

V_RRM = Repetitive peak reverse voltage

V_DRM = Repetitive peak off state voltage

V_RSM = Non repetitive peak reverse voltage

Notes:

All ratings are specified for Tj=25 ^oC unless

otherwise stated.

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range -40 to +125 ^oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 ^oC.

(4) Minimum value for linear and exponential

waveshape to 80% rated V_DRM. Gate open.

Tj = 125 ^oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance

with EIA/NIMA Standard RS-397, Section

5-2-2-6. The value defined would be in addi-

tion to that obtained from a snubber circuit,

comprising a 0.2 mF capacitor and 20 ohms

resistance in parallel with the thristor under

test.

Repetitive peak reverse leakage and off state leakage

I_{RRM /}I_DRM

10 mA

60 mA (3)

Critical rate of voltage rise

dV/dt (4)

3000 V/msec

Conducting - on state

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)M		1237		A	Sinewave,180^o conduction,T_c=55^oC
RMS value of on-state current	I_TRMSM		2555		A	Nominal value
Peak one cycle surge (non repetitive) current	I_TSM		- 18		KA KA	8.3 msec (60Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC 10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		1.62x10³		KA²s	8.3 msec and 10.0 msec
Latching current	I_L		-		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		1000		mA	V_{D =} 24 V; I = 2.5 A
Peak on-state voltage	V_TM		2.1		V	I_TM = 2000 A; Duty Cycle £ 0.01%; T_j =125 ^oC
Threshold vlotage	V_T₀		1.7		V
Slope resistance	r_T		0.21		mΩ
Critical rate of rise of on-state current (5, 6)	di/dt		2000		A/ms	Switching from V_DRM £ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		1000		A/ms	Switching from V_DRM £ 1000 V

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		30		W
Average gate power dissipation	P_G(AV)		10		W
Peak gate current	I_GM		-		A
Gate current required to trigger all units	I_GT		- 400 -		mA mA mA	V_D = 10 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 10 V;R_L = 3 ohms;T_j = +25 ^oC V_D = 10 V;R_L = 3 ohms;T_j = +125^oC
Gate voltage required to trigger all units	V_GT		- 3.0 -		V V V	V_D = 10 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 10 V;R_L = 3 ohms;T_j = 0-125^oC V_D = Rated V_DRM; R_L = 1000 ohms; T_j = + 125 ^oC
Peak negative voltage	V_RG_M		10		V

Dynamic

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Delay time	t_d		-	1	ms	I_TM = 50 A; V_D = Rated V_DRM Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms
Turn-off time (with V_R = -50 V)	t_q		-	20	ms	I_TM = 1000 A; di/dt = 25 A/ms; V_R ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM; V_G = 0; T_j = 125 ^oC; Duty cycle ³ 0.01%
Reverse recovery charge	Q_rr		-	-	mC	I_TM = 1000 A; di/dt = 25 A/ms; V_R ³ -50 V

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Operating temperature	T_j	-40	+125		^oC
Storage temperature	T_stg	-40	+150		^oC
Thermal resistance - junction to case	R_Q_(j-c)		- -		K/KW	Double sided cooled Single sided cooled
Thermal resistamce - case to heatsink	R_Q_(c-s)		- -		K/KW	Double sided cooled * Single sided cooled *
Thermal resistamce - junction to heatsink	R_Q₍_j_-s)		24 48		K/KW	Double sided cooled * Single sided cooled *
Mounting force	P	19	26		kN
Weight	W			510	g	About