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N-Channel Enhancement Mode 1700V Silicon Carbide Power MOSFET

$4.15

200-999
Piece/Pieces
$3.98

≥1000
Piece/Pieces

option:

ID:5.0A 3/5A
VDSmax:1700V
VGSmax:-10/+25V
VGSop:-5/+20V
lD(pulse):6.0A
PD:69W

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-1A01K170K

Brand: YZPST

Place Of Origin: China

VDSmax: 1700V

VGSmax: -10/+25V

VGSop: -5/+20V

ID: 5.0A 3/5A

LD(pulse): 6.0A

PD: 69W

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 100000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 10000

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

YZPST-1A01K170K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode

V_DS = 1700 V

RDs(on) = 1.0Q

lDS@25°C = 5.0 A

Features

High-voltage Capacitive
High Blocking Voltage with low On-Resistance
High Speed Switching with Low Capacitances
Easy to Parallel and Simple to Drive
Ultra-low Drain-gate capacitance
Avalance Ruggedness
Silicon Carbide Power MOSFET

Benefits

Higher System Efficiency
Reduced Cooling Requirements
Increased System Reliability
Increased System Switching Frequency

Applications
Auxiliary Power Supplies
Switch Mode Power Supplies

Part Number	Package
1A01K170K	TO-247-3

Maximum Ratings (Tc=25°C unless otherwise specified)

Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > N-Channel Enhancement Mode 1700V Silicon Carbide Power MOSFET

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