Home > Products > Semiconductor Module Devices > Diode Module > 2000V Thyristor Diode Module Thyristor chip with center gate

Contact Supplier

Mr. John chang

Leave a message

Contact Now

2000V Thyristor Diode Module Thyristor chip with center gate

$31

10-99
Piece/Pieces
$22.5

≥100
Piece/Pieces

option:

VDRM/VRRM:2000V
VRSM:2100V
IT(AV):215A
ITRMS:340A
(di/dt)cr:100A/us

Contact Now

 Chat Now

Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

< >

Overview

Product Attributes

Model No.: YZPST-MCD215-20I01

Brand: YZPST

Place Of Origin: China

VDRM/VRRM: 2000V

VRSM: 2100V

IT(AV): 215A

ITRMS: 340A

(di/dt)cr: 100A/us

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000

Transportation: Ocean,Land

Supply Ability: 100000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Picture Example:

Thyristor/Diode Modules YZPST-MCD215-20I01

Features
· Industrial standard package
· Electrically insulated base plate
· Heat transfer through aluminium oxide ceramic
insulated metal base plate
· Chip soldered on direct copper bonded AL2O3
ceramic
· Thyristor chip with center gate

Typical Applications

· DC motor control

· AC motor soft starters

· Temperature control

· Professional light dimming

VDRM/VRRM	Tj=25°C	2000	V
VRSM	Tj=25°C	2100	V

Maximum Ratings

Symbol	Condition	Ratings	Unit
IT(AV)	sin. 180; Tc =85°C,	215	A
ITRMS	sin. 180; Tc =125°C,	340	A
ITSM	Tvj =45°C; 10 ms	8000	A
ITSM	Tvj =125°C; 10 ms	6800	A
I2t	Tvj =45°C; 8,3…10 ms	320	kA2S
(di/dt)cr	non-repetitive	100	A/us
Viso	A.C. 1s / 1min.	3600/3000	V
Tj		-40 ~ + 125	°C
Tstg		-40 ~ + 125	°C
W	About	150	g

Electrical Characteristics

Symbol	Condition	Ratings	Unit
IDRM /IRRM	AtVDRM, Tj=125°C	15	mA
VT	On-State Current 200A, Tj=25°C	1.20	V
VT(TO)	Tj=125°C	0.80	V
tgd	Tj=25°C	2	us
tq	Tj=100°C	200	us
IGT/VGT	Tj=25°C	150 / 2.0	mA/V
VGD	Tj=125°C	0.25	V
(dv/dt)cr	Tj=125°C	1000	V/us
IH	Tj=25°C, max.	150	mA
IL	Tj=25°C, max.	200	mA
Rth(j-c)	Per Module	0.13	K/W