Home > Products > Semiconductor Module Devices > Diode Module > Heat transfer through aluminium 500A Dual thyristor module

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Heat transfer through aluminium 500A Dual thyristor module

$195

1-19
Piece/Pieces
$162

≥20
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

1 Piece/Pieces

Transportation:

Ocean,Air

Port:

SHANGHAI

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Product Description

Product Attributes
Supply Ability & Additional Information

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Overview

Product Attributes

Model No.: YZPST-MT3-500-36-D

Brand: YZPST

ITRMS: 785A

ITSM: 18kA

I2t: 1620kA2S

VDRM/VRRM: 3600/3600V

DI/DT: 400A/us

TJ: -40 ~ + 125°C

Tstg: -40 ~ + 125°C

Supply Ability & Additional Information

Productivity: 10000

Transportation: Ocean,Air

Place of Origin: CHINA

Supply Ability: 1000

Certificate: ISO9001-2008,ROHS

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Diode Modules

YZPST-MD3-800-44-N-D

Features

· Heat Transfer Through Aluminium Oxide Ceramic Isolated Metal Baseplate

· Hard Soldered Joints For High Reliability

· UL Recognized

Typical Applications

· Rectifier for drives applications

· Rectifiers for UBS

· Battery chargers

BLOCKING

Symbol	Condition	Ratings	Unit
V_RRM V_RSM	T_j= T_j Max.	4400 4500	V
I_RRM	AtV_RRM,Single phase,half wave,T_j= T_j Max.	30	mA
V_I_SOL	a.c 50HZ,r.m.s,1S/1min	3600/3000	V

CONDUCTING

Symbol	Condition	Ratings	Unit
I_F(AV)	T_C=85°C; 180° sine	800	A
I_F(_RMS₎	T_C=85°C; 180° sine	1256	A
I_FSM	T_j= T_j Max.; t = 10 ms (50 Hz); sine	23000	A
I²t	T_j= T_j Max.; t = 10 ms (50 Hz); sine	2600	kA²S
V_F(TO)	Tj= Tj Max.	0.9	V
r_F	Tj= Tj Max.	0.37	mΩ
V_FM	On-State Current 2512A,T_j=25°C	1.77	V
T_rr	Tj= 125°C I_F=120A –di/dt=1000A/us V_R=1200V	-	ns

Electrical Characteristics

Symbol	Condition	Ratings	Unit
R_th(j-c)	Per Module	0.025	°C /W
R_th(c-h)	Per Module	0.008	°C /W
T_j		-40 ~ + 150	°C
T_stg		-40 ~ + 125	°C
M	mounting torque	9	Nm
M	terminal torque	18	Nm
W		-	g