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High reliability MFC200 1600V thyristor diode module

$25

50-999
Piece/Pieces
$18

≥1000
Piece/Pieces

option:

VRRM:1600V
VDRM:1600V
VRSM:1700V
IRRM, IDRM:70 mA
dv/dt:1000 V/µs
ITAV, IFAV:216A

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-MFC200-16

Brand: YZPST

Place Of Origin: China

VRRM: 1600V

VDRM: 1600V

VRSM: 1700V

IRRM, IDRM: 70 mA

Dv/dt: 1000 V/µs

ITAV, IFAV: 216A

ITRMS, IFRMS: 340A

ITSM, IFSM: 6.8kA

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000

Transportation: Ocean,Land

Supply Ability: 100000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Picture Example:

YZPST-MFC200-16

THYRISTOR / Diode Module

Features:
- Heat transfer through aluminium-nitride ceramic isolated metal baseplate
- Hard soldered joints for high reliability
- Thyristor with amplifying gate
Typical applications:
- DC motor control - AC motor soft starters
- Temperature control
- Professional light dimming

Reverse blocking - Off-state

Device Type	VRRM (1)	VDRM (1)	VRSM (1)
YZPST MFC200	1600 V	1600 V	1700 V

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off-state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive reverse and off-state peak leakage current	IRRM, IDRM	70 mA (3)
Critical rate of rise of off-state voltage	dv/dt	1000 V/µs (4)

Conducting

Parameter	Symbol	Min	Max	Typ	Unit		Conditions
Average on-state / forward current	ITAV, IFAV		216			A	50 Hz sine wave,180o conduction,
							Tc = 85 °C
RMS on-state / forward current	ITRMS, IFRMS		340			A	50 Hz sine wave,180° conduction,
							Tc = 85 °C
Surge non repetitive current	ITSM, IFSM		6.8			kA	50 Hz sine wave
							Half cycle
I squared t	I2 t		231			kA2s	VR = 0
							Tj = Tjmax
Peak on-state / forward voltage	VTM, VFM		1.1			V	On-state current 200 A, Tj = Tjmax
Threshold voltage	VT(TO)		0.8			V	Tj = Tjmax
On-state slope resistance	rT		1.4			mΩ	Tj = Tjmax
Holding current	IH			150		mA	Tj = 25 °C
Latching current	IL			200		mA	Tj = 25 °C
Critical rate of rise of on-state current	di/dt		500			A/µs	IG = 5 IGT, tr= 1 µs, Tj = Tjmax, non rep.
RMS isolation voltage	VINS		3000			V	AC 50 Hz, 60 s