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Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > Table glass passivation process TO-247 SCR 1200V
Mr. John chang
Model No.: YZPST-40TPS12
Brand: YZPST
Place Of Origin: China
IT (RMS): 40A
VDRM / VRRM: 1200V
IGT: ≤35mA
ITSM: 460A
IGM: 4A
PGM: 5W
PG(AV): 1W
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 1000000
Transportation: Ocean,Land,Air
Supply Ability: 1000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
SCR YZPST-40TPS12
Product features
Table glass passivation process,
The back (anode) electrode metal: Ti-Ni-Ag
The Positive (gate, anode ) electrode metal: AL
Alternating current switch,
AC DC power converter,
The control of electric heating
Motor speed control
TO-247
Symbol
Value
Unit
IT (RMS)
40
A
VDRM / VRRM
1200
V
IGT
≤35
mA
Absolute ratings (Limiting Values)
Parameter
RMS on-state current (180°conduction angle)
ITSM
Non repetitive surge peak on-state
Current (tp= 10ms)
460
IGM
Peak gate current(tp=20us)
4
PGM
Peak gate power
5
W
PG(AV)
Average gate power
1
Tstg
Tj
Storage temperature
Operating junction temperature
-40--+ 150 -40--+ 125
℃
Thermai Resistances
Rth (j-c)
Junction to case
0.95
℃/W
Electrical characteristicsTj=25℃ unless otherwise stated
Test Conditions
Min
Type
Max
VD= 12V, RL=33 Ω
----
-----
35
VGT
1.5
VGD
VD=VDRM, RL=3.3KΩ, RGK= 1KΩ,Tj=125℃
0.2
H
IT=500mA
75
L
IG= 1.2IGT
150
dV/dt
VD=67%VDRM, GateOpen, Tj=110℃
1000
v/ μs
VTM
IT=80A,tp=380 μs
1.6
dI/dt
IG=2IGT
50
A/ μs
I2T
Tp= 10ms
1060
A2 S
IDRM
VD=VDRM
Tj=25℃
10
μA
Tj=125℃
VRRM
VR=VRRM
Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)
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