1000A ANTI-PARALLEL SCR module ASSEMBLY-KPX1000A-1600V

ANTI-PARALLEL SCR module ASSEMBLY-KPX1000A-1600V

Features:

all diffused design

high current capabilities

high surge current capabilities

high rates voltages

high dv/dt

low gate current dynamic gate

low thermal impedance

compact size and small weight

APPLICATION

High Power Drives

DC Motor Control

    High Voltage Power Supplies

Blocking - Off State

VRRM (1)	VDRM (1)	VRSM (1)
1600	1600	1700

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage	IRRM / IDRM	10 mA 100 mA (3)
Critical rate of voltage rise	dV/dt (4)	1000 V/msec

Conducting - on state

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Max. average value of on-state current	IT(AV)		1000		A	Sinewave,180o conduction,Tc=95oC
RConducting - on state MS value of on-state current	ITRMSM		1570		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	ITSM		-     30		kA   kA	8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC
I square t	I2t		4500x103		A2s	10 msec
Treshold voltage	VT(T0)		0.928		V
Slope resistance	rT		0.189		mΩ
Latching current	IL		2000		mA	VD = 12 V; RL= 12 ohms
Holding current	IH		500		mA	VD = 12 V; I = 2.5 A
Peak on-state voltage	VTM		1.75		V	ITM =3000 A(MAX); Tj =1 25 oC
Critical rate of rise of on-state current (5, 6)	di/dt		200		A/ms	Switching from VDRM £ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		-		A/ms	Switching from VDRM £ 1000 V

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	PGM		30		W
Average gate power dissipation	PG(AV)		4		W
Peak gate current	IGM		-		A
Gate current required to trigger all units	IGT		300		mA	VD = 10 V;IT=3A;Tj = +25 oC
Gate voltage required to trigger all units	VGT		3		V	VD = 10 V;IT=3A;Tj = +25 oC
Peak negative voltage	VRGM		5		V